Observation of 2D Conduction in Ultrathin Germanium Arsenide Field-Effect Transistors
نویسندگان
چکیده
منابع مشابه
Ultrathin CdSe Nanowire Field-Effect Transistors
We report the fabrication, and electrical and optical characterization, of solution-liquid-solid (SLS) grown CdSe nanowire field-effect transistors. Ultrathin nanowires (7–12 nm diameters) with lengths between 1 $m and 10 $m were grown by the SLS technique. Al-CdSe-Al junctions are then defined over oxidized Si substrate using photolithography. The nanowires, which were very resistive in the da...
متن کاملInsulating behavior in ultrathin bismuth selenide field effect transistors.
Ultrathin (approximately three quintuple layer) field-effect transistors (FETs) of topological insulator Bi(2)Se(3) are prepared by mechanical exfoliation on 300 nm SiO(2)/Si susbtrates. Temperature- and gate-voltage-dependent conductance measurements show that ultrathin Bi(2)Se(3) FETs are n-type and have a clear OFF state at negative gate voltage, with activated temperature-dependent conducta...
متن کاملGermanium Based Field-Effect Transistors: Challenges and Opportunities
The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This...
متن کاملJunctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes
The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by the polarization of the ferroelectric poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] th...
متن کاملEffect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors.
The effect of diameter variation on electrical characteristics of long-channel InAs nanowire metal-oxide-semiconductor field-effect transistors is experimentally investigated. For a range of nanowire diameters, in which significant band gap changes are observed due to size quantization, the Schottky barrier heights between source/drain metal contacts and the semiconducting nanowire channel are ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ACS Applied Materials & Interfaces
سال: 2020
ISSN: 1944-8244,1944-8252
DOI: 10.1021/acsami.0c00348